ANADIGICS (NASDAQ: ANAD) is one of 27 public companies in the “Integrated Circuits” industry, but how does it contrast to its peers? We will compare ANADIGICS to related businesses based on the strength of its earnings, institutional ownership, analyst recommendations, profitability, valuation, risk and dividends.
This table compares ANADIGICS and its peers’ net margins, return on equity and return on assets.
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This is a breakdown of current ratings and price targets for ANADIGICS and its peers, as reported by MarketBeat.
||Strong Buy Ratings
As a group, “Integrated Circuits” companies have a potential upside of 15.11%. Given ANADIGICS’s peers higher possible upside, analysts clearly believe ANADIGICS has less favorable growth aspects than its peers.
Insider and Institutional Ownership
56.0% of shares of all “Integrated Circuits” companies are held by institutional investors. 14.3% of shares of all “Integrated Circuits” companies are held by company insiders. Strong institutional ownership is an indication that endowments, hedge funds and large money managers believe a company will outperform the market over the long term.
Valuation and Earnings
This table compares ANADIGICS and its peers revenue, earnings per share (EPS) and valuation.
ANADIGICS’s peers have higher revenue and earnings than ANADIGICS. ANADIGICS is trading at a lower price-to-earnings ratio than its peers, indicating that it is currently more affordable than other companies in its industry.
ANADIGICS peers beat ANADIGICS on 8 of the 8 factors compared.
ANADIGICS, Inc. is engaged in the designing and manufacturing of radio frequency (RF) semiconductor solutions for infrastructure and mobile communications and data transmission markets. The Company’s product portfolio includes line amplifiers, reverse path amplifiers, power amplifiers (PAs) and front-end integrated circuits (FEIC). The Company designs, develops, and manufactures RFIC’s primarily using GaAs compound semiconductor substrates with various process technologies, including metal semiconductor field effect transistor (MESFET), pseudomorphic high-electron-mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT). The Company’s InGaP-Plus technology, combines InGaP HBT and pHEMT processes on a single substrate and integrates the PA function and the RF active switch function on the same die. Additionally, the Company offers VCSEL process technology. The Company fabricates its ICs in its six-inch diameter GaAs wafer fabrication facility.
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